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NTHS4101P
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
5000
4500
V DS = 0 V
V GS = 0 V
T J = 25 ° C
5
QT
4000
3500
3000
4
3
2500
2000
C rss
C iss
2
Q1
Q2
1500
1000
500
0
? 6 ? 4 ? 2 0 2
? V GS ? V DS
4
6
8
C oss
10 12 14 16 18 20
1
0
0
3
I D = ? 4.5 A
T J = 25 ° C
6 9 12 15 18 21 24
Q g , TOTAL GATE CHARGE (nC)
27
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
Figure 7. Gate ? to ? Source and Drain ? to ? Source
Voltage vs. Total Gate Charge
1000
100
V DD = ? 16 V
I D = ? 4.5 A
V GS = ? 4.5 V
t d(off)
t f
5
4
3
V GS = 0 V
T J = 25 ° C
t r
10
t d(on)
2
1
1
1
10
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R G , GATE RESISTANCE (OHMS)
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
? V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
100
10
10 m s
1
V GS = ? 8 V
SINGLE PULSE
100 m s
1 ms
0.1
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
dc
0.01
0.1
PACKAGE LIMIT
1
10
100
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
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